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VT1045CBP
www.vishay.com
Vishay General Semiconductor
Revision: 22-May-12
3
Document Number: 89363
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Instantaneous
Forward Voltage (V)
0.1 0.2 0.4 0.7 0.9 1.10.3 0.5
0.6 0.8 1.0
100
10
1
0.1
TA
= 150 °C
TA
= 125 °C
TA
= 100 °C
TA
= 25 °C
In
s
tantaneou
s
Forward Current (A)
20 40 60 80 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e Current (mA)
TA
= 150 °C
TA
= 25 °C
TA
= 100 °C
TA
= 125 °C
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
TJ
= 25 °C
f = 1.0 MHz
Vsig
= 50 mV
p-p
10
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Junction to Case
1
Transient Thermal Impedance (°C/W)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.370 (9.40)
0.360 (9.14)
0.415 (10.54) MAX.
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.105 (2.67)
0.095 (2.41)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.154 (3.91)
0.148 (3.74)
1
3
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.145 (3.68)
0.135 (3.43)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
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